Neutron-Transmutation-Doped SiliconJens Guldberg Springer Science & Business Media, 2013. nov. 11. - 506 oldal This volume contains the papers presented at the Third International Conference on Neutron Transmutation Doping of Silicon held in Copenhagen on August 27-29, 1980. The first symposium associated with neutron transmutation doping technology as such was arranged in 1976 at Oak Ridge National Laboratory by John Cleland. At this time it had become clear that the technology could be implemented on a commercial scale and that several types of power devices in the electronic industry would benefit from employing neutron transmutation doped silicon in the fabrication proces's'. Two years later the Second International Conference on Neutron Transmutation Doping of Semiconductors was arranged at the University of Missouri, Columbia, by Jon Meese. On this occasion the various aspects of silicon fabrication were reviewed, including irradiation control, radiation induced defects, device optimization, and possible benefits of irradiating other semiconductor compounds. In view of the now wide spread acceptance of neutron doped silicon in the power device industry the present conference was largely directed towards the current status of transmutation doping of silicon. Accordingly, the scope of the three day confe rence was to review developments in the technology which had occurred during the two years which had passed since the previous conference. In addition, brief accounts were given with respect to other semiconducting compounds and emerging irradiation techniques which may impact on device design principles in the future. |
Tartalomjegyzék
1 | |
19 | |
Impact of Defects Formed in Neutron Transmutation Doping | 35 |
Electrical Property Studies of Oxygen in CzochralskiGrown | 55 |
Impurity Interactions with Structural Defects in Irradiated | 83 |
Defect Production During Neutron Doping of Si Invited | 101 |
Wafer Stability A Comparison of NTDSilicon with | 141 |
Electron Spin Resonance ESR Study on The Thermal Annealing | 151 |
Characterization of NTD Silicon Irradiated in Grenoble | 263 |
Development of the Irradiation Facilities for Silicon | 287 |
Neutron Transmutation Doping of Silicon Slices | 305 |
DEVICE DESIGN | 319 |
NTD Silicon Behaviour During Diffusion Heat Treatment | 339 |
An Optimization of Blocking Characteristics of High Voltage | 355 |
CHARACTERIZATION | 377 |
Precision Resistivity Measurements on NTDSilicon | 395 |
Optical Studies of Lattice Damage in NeutronTransmutation | 161 |
A Facility and Program at IPNS to Study Defects Produced | 165 |
IRRADIATION TECHNOLOGY | 183 |
The Selection of Starting Material for NeutronTransmutation | 207 |
Factors Affecting Phosphorus Production Rate in | 223 |
Neutron Doped Silicon in Grenoble Reactor Facilities | 247 |
Photoluminescence Analysis of NTDSilicon | 417 |
SPECIAL TOPICS | 437 |
Application of NTD Silicon for Radiation Detector | 473 |
Neutron Transmutation Doping of GaAs | 487 |
Participants | 497 |
Más kiadások - Összes megtekintése
Gyakori szavak és kifejezések
absorption acceptor annealing temperature atoms band boron calculated calibration carrier concentration cm³ compensation Cz Si samples Czochralski damage defects density detector devices diameter diffusion diodes displacement divacancy donor concentration dopant doped silicon effect electron errors etching exciton experimental extended annealing extrinsic factor fast neutron Figure float zone fluence function heat treatment impurity infrared ingot initial intensity interbase interstitial irradiation lattice light water reactor minority carrier minority carrier lifetime n-type neutron dose neutron fluence neutron flux neutron irradiation Neutron Transmutation Doping NTD Cz NTD silicon observed obtained ohm cm optical oxygen p-n junction parameters peak phonon phosphorus photoconductivity Phys probe produced production rate radiation ratio reactor recoil resistivity measurements Semiconductors shown in Fig silicon crystal silicon irradiated slices spectra spectrum spreading resistance starting material surface Table technique thermal neutron thickness thyristors tion vacancy variation wafer