Neutron-Transmutation-Doped Silicon

Első borító
Jens Guldberg
Springer Science & Business Media, 2013. nov. 11. - 506 oldal
This volume contains the papers presented at the Third International Conference on Neutron Transmutation Doping of Silicon held in Copenhagen on August 27-29, 1980. The first symposium associated with neutron transmutation doping technology as such was arranged in 1976 at Oak Ridge National Laboratory by John Cleland. At this time it had become clear that the technology could be implemented on a commercial scale and that several types of power devices in the electronic industry would benefit from employing neutron transmutation doped silicon in the fabrication proces's'. Two years later the Second International Conference on Neutron Transmutation Doping of Semiconductors was arranged at the University of Missouri, Columbia, by Jon Meese. On this occasion the various aspects of silicon fabrication were reviewed, including irradiation control, radiation induced defects, device optimization, and possible benefits of irradiating other semiconductor compounds. In view of the now wide spread acceptance of neutron doped silicon in the power device industry the present conference was largely directed towards the current status of transmutation doping of silicon. Accordingly, the scope of the three day confe rence was to review developments in the technology which had occurred during the two years which had passed since the previous conference. In addition, brief accounts were given with respect to other semiconducting compounds and emerging irradiation techniques which may impact on device design principles in the future.
 

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Tartalomjegyzék

GENERAL SUBJECTS
1
Large Scale Production of NTDSilicon
19
RADTATION DEFECTS
35
Electrical Property Studies of Oxygen in CzochralskiGrown
55
Impurity Interactions with Structural Defects in Irradiated
83
Defect Production During Neutron Doping of Si Invited
101
Wafer Stability A Comparison of NTDSilicon with
141
Optical Studies of Lattice Damage in NeutronTransmutation
161
Development of the Irradiation Facilities for Silicon
287
Neutron Transmutation Doping of Silicon Slices
305
CHAPTER H DEVICE DESIGN
319
NTD Silicon Behaviour During Diffusion Heat Treatment
339
An Optimization of Blocking Characteristics of High Woltage
355
CHARACTERIZATION
377
Precision Resistivity Measurements on NTDSilicon
395
Photoluminescence Analysis of NTDSilicon 117
417

A Facility and Program at IPNS to Study Defects Produced
165
IRRADIATION TECHNOLOGY
183
The Selection of Starting Material for NeutronTransmutation
207
Factors Affecting Phosphorus Production Rate in
223
Neutron Doped Silicon in Grenoble Reactor Facilities 27
247
Characterization of NTD Silicon Irradiated in Grenoble
263
SPECIAL TOPICS
437
Application of NTD Silicon for Radiation Detector
473
Neutron Transmutation Doping of GaAs
487
Participants
497
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