Molecular Beam Epitaxy: Applications to Key MaterialsElsevier, 1995. dec. 31. - 792 oldal In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices. |
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1 - 5 találat összesen 85 találatból.
vii. oldal
... atomic monolayer dimensions and to monitor the growth process in real time. For example, the ultra-high vacuum growth environment of MBE makes it possible to study the dynamics of the growth process itself using modulated molecular beam ...
... atomic monolayer dimensions and to monitor the growth process in real time. For example, the ultra-high vacuum growth environment of MBE makes it possible to study the dynamics of the growth process itself using modulated molecular beam ...
xv. oldal
... Atomic Surface Reconstructions ............................ 138 3.2 Surface Chemisorption ........................................... 146 3.3 Incorporation of Chemisorbed Species: Island Formation and Step Propagation ..........
... Atomic Surface Reconstructions ............................ 138 3.2 Surface Chemisorption ........................................... 146 3.3 Incorporation of Chemisorbed Species: Island Formation and Step Propagation ..........
2. oldal
... atomic layer (a monolayer) per second are used. This places constraints on the operational temperatures of sources, and the speeds with which shutters are required to operate. From the above, the key features to be addressed in a ...
... atomic layer (a monolayer) per second are used. This places constraints on the operational temperatures of sources, and the speeds with which shutters are required to operate. From the above, the key features to be addressed in a ...
9. oldal
... atomic layer. Given that a flat crystalline surface has between 1014 and 1015 atoms cm'z, Fig. 4 indicates that a pressure of approximately 10'6 mbar corresponds to an impingement rate which would lead to addition of one monolayer in ...
... atomic layer. Given that a flat crystalline surface has between 1014 and 1015 atoms cm'z, Fig. 4 indicates that a pressure of approximately 10'6 mbar corresponds to an impingement rate which would lead to addition of one monolayer in ...
56. oldal
... atomic/molecular constituents, some areas of MBE benefit from introduction of ions into the flux. The ions may contribute directly to the deposited material (e.g., as intentional dopants), or may be used to supply energy for ...
... atomic/molecular constituents, some areas of MBE benefit from introduction of ions into the flux. The ions may contribute directly to the deposited material (e.g., as intentional dopants), or may be used to supply energy for ...
Tartalomjegyzék
1 | |
114 | |
Gaxln1xAS1yPyInP MBE with Nonelemental Sources Heterostructures and Device Properties | 275 |
Chapter 4 Molecular Beam Epitaxy of Wide Gap IIVI Semiconductor Heterostructures | 344 |
Chapter 5 Elemental Semiconductor HeterostructuresGrowth Properties and Applications | 453 |
Chapter 6 MBE Growth of High Tc Superconductors | 505 |
Chapter 7 MBE Growth of ArtificiallyLayered Magnetic Metal Structures | 623 |
Chapter 8 Reflection High Energy Electron Diffraction Studies o f the Dynamics of Molecular Beam Epitaxy | 669 |
Index | 745 |
Más kiadások - Összes megtekintése
Gyakori szavak és kifejezések
adatoms AlGaAs alloy Appl arsenic atomic band bandgap barrier buffer layer CdTe composition concentration contamination crucible cryopump Crystal Growth density deposition desorption device diffusion dimer dopant doping effect electron beam electron beam evaporators energy epilayer evaporation exciton Figure film flux GaAs GaAs substrate gallium grown growth of high growth rate growth temperature GSMBE Gunshor heterostructures high Tc superconductors impurities incorporation increases intensity oscillations interface lattice lattice constant Lett luminescence magnetic mbar MBE growth MBE system measurements MnSe mobility Molecular Beam Epitaxy monolayer multilayers nucleation observed optical oxide oxygen peak phase phonon photoluminescence Phys pressure pumping purity quantum ratio reconstruction RHEED sample semiconductor shown in Fig shutter silicon species step strain structures substrate substrate temperature superlattice surface surface reconstruction techniques Technol thermal thickness tion transition trap unit cell vacuum valence band wafer zincblende ZnSe