Molecular Beam Epitaxy: Applications to Key MaterialsElsevier, 1995. dec. 31. - 792 oldal In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices. |
Tartalomjegyzék
| 1 | |
Chapter 2 Molecular Beam Epitaxy of HighQuality GaAs and AIGaAs | 114 |
Gaxln1xAS1yPyInP MBE with Nonelemental Sources Heterostructures and Device Properties | 275 |
Chapter 4 Molecular Beam Epitaxy of Wide Gap IIVI Semiconductor Heterostructures | 344 |
Chapter 5 Elemental Semiconductor HeterostructuresGrowth Properties and Applications | 453 |
Más kiadások - Összes megtekintése
Gyakori szavak és kifejezések
adatoms AlGaAs alloy Appl arsenic atomic band bandgap barrier buffer layer CdTe composition concentration contamination crucible cryopump Crystal Growth density deposition desorption device diffusion dimer dopant doping effect electron beam electron beam evaporators energy epilayer evaporation exciton Figure film flux GaAs GaAs substrate gallium grown growth of high growth rate growth temperature GSMBE Gunshor heterostructures high Tc superconductors impurities incorporation increases intensity oscillations interface lattice lattice constant Lett luminescence magnetic mbar MBE growth MBE system measurements MnSe mobility Molecular Beam Epitaxy monolayer multilayers nucleation observed optical oxide oxygen peak phase phonon photoluminescence Phys pressure pumping purity quantum ratio reconstruction RHEED sample semiconductor shown in Fig shutter silicon species step strain structures substrate substrate temperature superlattice surface surface reconstruction techniques Technol thermal thickness tion transition trap unit cell vacuum valence band wafer zincblende ZnSe