Molecular Beam Epitaxy: Applications to Key Materials

Első borító
Elsevier, 1995. dec. 31. - 792 oldal
In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.
 

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Tartalomjegyzék

Chapter 1 The Technology and Design of Molecular Beam Epitaxy Systems
1
Chapter 2 Molecular Beam Epitaxy of HighQuality GaAs and AIGaAs
114
Gaxln1xAS1yPyInP MBE with Nonelemental Sources Heterostructures and Device Properties
275
Chapter 4 Molecular Beam Epitaxy of Wide Gap IIVI Semiconductor Heterostructures
344
Chapter 5 Elemental Semiconductor HeterostructuresGrowth Properties and Applications
453
Chapter 6 MBE Growth of High Tc Superconductors
505
Chapter 7 MBE Growth of ArtificiallyLayered Magnetic Metal Structures
623
Chapter 8 Reflection High Energy Electron Diffraction Studies o f the Dynamics of Molecular Beam Epitaxy
669
Index
745
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