Crystal Growth and Evaluation of Silicon for VLSI and ULSI

Első borító
CRC Press, 2014. dec. 8. - 430 oldal

Silicon, as a single-crystal semiconductor, has sparked a revolution in the field of electronics and touched nearly every field of science and technology. Though available abundantly as silica and in various other forms in nature, silicon is difficult to separate from its chemical compounds because of its reactivity. As a solid, silicon is chemically inert and stable, but growing it as a single crystal creates many technological challenges.

Crystal Growth and Evaluation of Silicon for VLSI and ULSI is one of the first books to cover the systematic growth of silicon single crystals and the complete evaluation of silicon, from sand to useful wafers for device fabrication. Written for engineers and researchers working in semiconductor fabrication industries, this practical text:

  • Describes different techniques used to grow silicon single crystals
  • Explains how grown single-crystal ingots become a complete silicon wafer for integrated-circuit fabrication
  • Reviews different methods to evaluate silicon wafers to determine suitability for device applications
  • Analyzes silicon wafers in terms of resistivity and impurity concentration mapping
  • Examines the effect of intentional and unintentional impurities
  • Explores the defects found in regular silicon-crystal lattice
  • Discusses silicon wafer preparation for VLSI and ULSI processing

Crystal Growth and Evaluation of Silicon for VLSI and ULSI is an essential reference for different approaches to the selection of the basic silicon-containing compound, separation of silicon as metallurgical-grade pure silicon, subsequent purification, single-crystal growth, and defects and evaluation of the deviations within the grown crystals.

 

Kiválasztott oldalak

Más kiadások - Összes megtekintése

Crystal Growth and Evaluation of Silicon for VLSI and ULSI
Golla Eranna
Korlátozott előnézet - 2014
Crystal Growth and Evaluation of Silicon for VLSI and ULSI
Golla Eranna
Korlátozott előnézet - 2014
Crystal Growth and Evaluation of Silicon for VLSI and ULSI
G. Eranna
Nincs elérhető előnézet - 2016

Gyakori szavak és kifejezések

analysis annealing argon atoms axial boron bulk carbon chemical circuits contamination convection crucible CZ silicon crystals CZ-grown silicon Czochralski silicon crystals Czochralski-grown density devices diameter diffusion dislocation-free dislocations dopant doping effect electrical Electrochemical Society electron etching evaluation flow germanium gradient graphite growing crystal grown grown-in defects growth of silicon heat hydrogen infrared ingot integrated circuit interface shape internal gettering Journal of Crystal magnetic field material measured melt convection metallic impurities method microdefects molten silicon n-type nitrogen nucleation OISF oxygen concentration oxygen precipitation p-n junction parameters particles phosphorus point defects polycrystalline silicon polysilicon present pull rate radial references therein reported resistivity rotation rate segregation segregation coefficient semiconductor shown in Figure silane sili silicon crystal growth silicon melt silicon surface silicon wafers simulation single crystals single-crystal silicon solar cells species spectroscopy stacking faults swirl defects technique tion ULSI vacancies VLSI and ULSI wafer surface x-ray zone

A szerzőről (2014)

Golla Eranna obtained his master’s degree from Sri Venkateswara University, Tirupati, India, with a top rank in the field of semiconductor physics. After that, he joined and received his Ph.D from the Indian Institute of Technology (IIT) Madras. Later, he moved to the IIT Kharagpur Microelectronics Centre. Dr. Eranna joined CEERI, Pilani, India, as a scientist and is currently a senior principal scientist. He became a professor under the Academy of Scientific and Innovative Research (CSIR, New Delhi), and regularly lectures on VLSI processing technology. He also maintains a full-fledged semiconductor device fabrication laboratory.

Bibliográfiai információk

CímCrystal Growth and Evaluation of Silicon for VLSI and ULSI
SzerzőGolla Eranna
Kiadásillusztrált
KiadóCRC Press, 2014
ISBN1482232812, 9781482232813
Terjedelem430 oldal
  
Idézet exportálásaBiBTeX EndNote RefMan