Neutron-Transmutation-Doped SiliconJens Guldberg Springer US, 1981. dec. 1. - 506 oldal This volume contains the papers presented at the Third International Conference on Neutron Transmutation Doping of Silicon held in Copenhagen on August 27-29, 1980. The first symposium associated with neutron transmutation doping technology as such was arranged in 1976 at Oak Ridge National Laboratory by John Cleland. At this time it had become clear that the technology could be implemented on a commercial scale and that several types of power devices in the electronic industry would benefit from employing neutron transmutation doped silicon in the fabrication proces's'. Two years later the Second International Conference on Neutron Transmutation Doping of Semiconductors was arranged at the University of Missouri, Columbia, by Jon Meese. On this occasion the various aspects of silicon fabrication were reviewed, including irradiation control, radiation induced defects, device optimization, and possible benefits of irradiating other semiconductor compounds. In view of the now wide spread acceptance of neutron doped silicon in the power device industry the present conference was largely directed towards the current status of transmutation doping of silicon. Accordingly, the scope of the three day confe rence was to review developments in the technology which had occurred during the two years which had passed since the previous conference. In addition, brief accounts were given with respect to other semiconducting compounds and emerging irradiation techniques which may impact on device design principles in the future. |
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Tartalomjegyzék
GENERAL SUBJECTS | 1 |
Large Scale Production of NTDSilicon | 19 |
Impact of Defects Formed in Neutron Transmutation Doping | 35 |
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absorption acceptor annealing temperature Appl atoms band blocking voltage bombardment boron calculated calibration carrier concentration cm³ cross section crystallographic defects Czochralski defects detector devices diameter diffusion diodes displacement donor concentration dopant doped silicon effect electron beam energy etching exciton experimental extended annealing fabricated factor fast neutron Figure float zone fluence function FZ silicon heat treatment impurity increase infrared ingot initial interbase irradiation leakage current luminescence minority carrier minority carrier lifetime n-type neutron dose neutron fluence neutron flux neutron irradiation Neutron Transmutation Doping NTD silicon observed obtained ohm cm optical oxygen p-n junction parameters peak phonon phosphorus photoconductivity Photoluminescence Phys probe produced radiation reactor recoil resistivity measurements Semiconductors shown in Fig silicon crystal silicon irradiated slices spectra spectrum spreading resistance starting material substrate surface Table technique thermal neutron thickness thyristors tion Topsil vacancy variation wafer